2SK3115 DATASHEET PDF

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expressly specified in a Renesas Electronics data sheets or data The 2SK is N-Channel DMOS FET device that features a low gate. The 2SK is N-Channel DMOS FET device that features a low gate charge and excellent switching Details, datasheet, quote on part number: 2SK 2SK from NEC Corporation. Find the PDF Datasheet, Specifications and Distributor Information.

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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Chip sourceelectronic components transistors k Original New IC K Data sheet status objective specification this data sheet contains datzsheet or goal specifications for product development. We will ensure that the shipping costs to a minimum. Npn power transistor features npn transistor applications general purpose switching and amplifier transistor description the device is manufactured in planar technology with base island layout.

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2SK_PDF Datasheet Download IC-ON-LINE

Relevancy Transaction Level Response Rate. Data sheet mos field effect transistor 2sk switching nchannel power mos fet industrial datashret description the 2sk is nchannel dmos fet device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, ac adapter. If you have better express service comapny Choose your preferred ways. Supplier Types Trade Assurance.

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Search 2sk online from elcodis, view and download k pdf datasheet, tools specifications. The k is nchannel dmos fet device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such.

But the article must remain in its original state. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

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We are not responsible for any accidents, delays or other issues caused by the express company. Npn medium power transistor features high current low saturation voltage complement to 2sb applications voltage regulation relay driver generic switch audio power amplifier dcdc converter description the device is a npn transistor manufactured by using planar technology resulting in rugged high performance devices.